RJK0349DPA_10 Datasheet, PDF(2/7 Page) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

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RJK0349DPA_10 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

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RJK0349DPA

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

Input capacitance

IGSS

IDSS

VGS(off)

1.2

RDS(on)

|yfs|

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Gate Resistance

Total gate charge

Gate to source charge

Qgs

Gate to drain charge

Qgd

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

Bodyâdrain diode forward voltage

VDF

Bodyâdrain diode reverse

trr

recovery time

Notes: 4. Pulse test

Typ

2.4

3.1

110

3850

740

240

1.5

9.5

5.3

6.5

9.8

0.81

Max

ï±0.1

2.5

3.1

4.3

1.06

Preliminary

(Ta = 25Â°C)

Unit

Test Conditions

ID = 10 mA, VGS = 0

ïA

VGS = ï±20 V, VDS = 0

ïA

VDS = 30 V, VGS = 0

VDS = 10 V, ID = 1 mA

mï

ID = 22.5 A, VGS = 10 V Note4

mï

ID = 22.5 A, VGS = 4.5 V Note4

ID = 22.5 A, VDS = 10 V Note4

VDS = 10 V, VGS = 0,

pF f = 1 MHz

nC VDD = 10 V, VGS = 4.5 V,

nC ID = 45 A

VGS = 10 V, ID = 22.5 A,

VDD ï 10 V, RL = 0.44 ï,

Rg = 4.7 ï

IF = 45 A, VGS = 0 Note4

IF = 45 A, VGS = 0

diF/ dt = 100 A/ ïs

REJ03G1645-0210 Rev.2.10

May 12, 2010

Page 2 of 6

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