RJK0331DPB Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0331DPB
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS
30
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
I_GSS
—
I_DSS
—
V_GS(off)
1.2
R_DS(on)
—
R_DS(on)
—
|y_fs|
—
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse
t_rr
—
recovery time
Body–drain diode reverse
recovery charge
Q_rr
—
Notes: 4. Pulse test
Typ
—
—
—
—
2.6
3.5
80
3380
660
190
0.6
22
7.8
4.8
5.8
3.9
45
4.6
0.82
30
26
Max
—
±0.1
1
2.5
3.4
4.9
—
—
—
—
—
—
—
—
—
—
—
—
1.07
—
—
(Ta = 25°C)
Unit
Test Conditions
V
I_D = 10 mA, V_GS = 0
µA
V_GS = ±20 V, V_DS = 0
µA
V_DS = 30 V, V_GS = 0
V
V_DS = 10 V, I_D = 1 mA
mΩ
I_D = 20 A, V_GS = 10 V ^Note4
mΩ
I_D = 20 A, V_GS = 4.5 V ^Note4
S
I_D = 20 A, V_DS = 10 V ^Note4
pF
V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
pF
Ω
nC V_DD = 10 V, V_GS = 4.5 V,
nC ^ID ^{= 40 A}
nC
ns
V_GS = 10 V, I_D = 20 A,
ns
V_DD ≅ 10 V, R_L = 0.5 Ω,
ns
Rg = 4.7 Ω
ns
V
I_F = 40 A, V_GS = 0 ^Note4
ns
I_F = 40 A, V_GS = 0
di_F/ dt = 100 A/ µs
nC
REJ03G1640-0400 Rev.4.00 Apr 10, 2008
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