RJK0213DPA Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

RJK0213DPA
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
25
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.2
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
1.85
2.5
110
4020
980
420
1.95
26
14
7.3
18
7.9
65
14
0.39
40
Max
—
± 0.5
1
2.5
2.3
3.3
—
5630
—
—
3.9
—
—
—
—
—
—
—
—
—
Preliminary
Unit
V
A
mA
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 25 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 30A, V_GS = 10 V ^Note4
I_D = 30A, V_GS = 4.5 V ^Note4
I_D = 30A, V_DS = 5 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 60 A
V_GS = 10 V, I_D = 30 A
V_DD  10 V
R_L = 0.33
Rg = 4.7 
I_F = 2 A, V_GS = 0 ^Note4
I_F =60 A, V_GS = 0
di_F/ dt = 100 A/ s
REJ03G1942-0100 Rev.1.00
Jun 15, 2010
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