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RJH60M7DPQ-A0 Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 600 V - 50 A - IGBT Application: Inverter | |||
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RJH60M7DPQ-A0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
â
Gate to emitter leak current
IGES
â
Gate to emitter cutoff voltage
VGE(off)
5
Collector to emitter saturation voltage VCE(sat)
â
VCE(sat)
â
Input capacitance
Cies
â
Output capacitance
Coes
â
Reverse transfer capacitance
Cres
â
Total gate charge
Qg
â
Gate to emitter charge
Qge
â
Gate to collector charge
Qgc
â
Switching time
td(on)
â
tr
â
td(off)
â
tf
â
Short circuit withstand time
tsc
6
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test
VF
â
trr
â
Preliminary
Typ
â
â
â
1.6
1.9
3150
180
95
125
25
50
60
50
180
80
8
1.4
100
Max
5
±1
7
2.1
â
â
â
â
â
â
â
â
â
â
â
â
2.0
â
(Ta = 25°C)
Unit
Test Conditions
ïA VCE = 600 V, VGE = 0
ïA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 50 A, VGE = 15 V Note3
V
IC = 90 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 50 A
ns VCC = 300 V, VGE = 15 V
ns IC = 50 A
ns Rg = 5 ïï
ns (Inductive load)
ïs Tc = 100 ï°C
VCC ï£ 360 V, VGE = 15 V
V
IF = 50 A Note3
ns IF = 50 A
diF/dt = 100 A/ïs
R07DS0538EJ0100 Rev.1.00
Sep 02, 2011
Page 2 of 3
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