RJH60M5DPQ-E0 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 600V - 37A - IGBT Application: Inverter

RJH60M5DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Test Conditions
Zero gate voltage collector current
/ Diode reverse current
I_CES/I_R
—
—
5
μA V_CE = 600 V, V_GE = 0
Gate to emitter leak current
I_GES
—
—
±1
μA V_GE = ±30 V, V_CE = 0
Gate to emitter cutoff voltage
V_GE(off)
5
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
—
7
1.8
2.3
2.4
—
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 37 A, V_GE = 15 V ^Note3
V
I_C =75 A, V_GE = 15 V ^Note3
Input capacitance
Cies
—
1900
—
pF V_CE = 25 V
Output capacitance
Coes
—
120
—
pF ^VGE ^{= 0}
Reverse transfer capacitance
Cres
—
70
—
pF ^{f = 1 MHz}
Total gate charge
Gate to emitter charge
Gate to collector charge
Qg
—
114
—
nC V_GE = 15 V
Qge
—
20
—
nC ^VCE ^{= 300 V}
Qgc
—
65
—
nC ^{IC = 37 A}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_total
t_sc
—
52
—
ns V_CC = 300 V
—
64
—
ns ^VGE ^{= 15 V}
—
147
—
ns ^{IC = 37 A}
—
60
—
ns ^{Rg = 5 Ω}
Inductive load
—
1.06
—
mJ
—
0.82
—
mJ
—
1.88
—
mJ
6
8
—
μs Tc = 100 °C
V_CC ≤ 360 V, V_GE = 15 V
FRD forward voltage
V_F
—
1.4
1.9
V
I_F = 30 A ^Note3
FRD reverse recovery time
FRD reverse recovery charge
t_rr
—
100
—
ns I_F = 30 A
Q_rr
—
0.19
—
μC ^diF^{/dt = 100 A/μs}
FRD peak reverse recovery current
I_rr
—
4.9
—
A
Notes: 3. Pulse test.
R07DS1087EJ0200 Rev.2.00
Jun 18, 2013
Page 2 of 9