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RJH60M3DPE Datasheet, PDF (2/3 Pages) Renesas Technology Corp – 600 V - 17 A - IGBT Application: Inverter
RJH60M3DPE
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
—
Gate to emitter leak current
IGES
—
Gate to emitter cutoff voltage
VGE(off)
5
Collector to emitter saturation voltage VCE(sat)
—
VCE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reverse transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
td(on)
—
tr
—
td(off)
—
tf
—
Short circuit withstand time
tsc
6
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
VF
—
trr
—
Preliminary
(Ta = 25°C)
Typ Max Unit
Test Conditions
—
5
A VCE = 600 V, VGE = 0
—
±1
—
7
1.8
2.3
2.2
—
900
—
60
—
30
—
36
—
6
—
16
—
30
—
15
—
80
—
80
—
8
—
A VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 17 A, VGE = 15 V Note3
V
IC = 35 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 17 A
ns VCC = 300 V, VGE = 15 V
ns IC = 17 A
ns Rg = 5 
ns Inductive load
s Tc = 100 C
VCC  360 V, VGE = 15 V
1.3
1.7
100
—
V
IF = 17 A Note3
ns IF = 17 A
diF/dt = 100 A/s
R07DS0533EJ0100 Rev.1.00
Sep 02, 2011
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