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RJH60M2DPE Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 600 V - 12 A - IGBT Application: Inverter | |||
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RJH60M2DPE
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ diode reverse current
ICES / IR
â
Gate to emitter leak current
IGES
â
Gate to emitter cutoff voltage
VGE(off)
5
Collector to emitter saturation voltage VCE(sat)
â
VCE(sat)
â
Input capacitance
Cies
â
Output capacitance
Coes
â
Reverse transfer capacitance
Cres
â
Total gate charge
Qg
â
Gate to emitter charge
Qge
â
Gate to collector charge
Qgc
â
Switching time
td(on)
â
tr
â
td(off)
â
tf
â
Short circuit withstand time
tsc
6
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
VF
â
trr
â
Preliminary
(Ta = 25°C)
Typ Max Unit
Test Conditions
â
5
ïA VCE = 600 V, VGE = 0
â
±1
â
7
1.9
2.5
2.3
â
430
â
40
â
15
â
19
â
4
â
8
â
30
â
15
â
90
â
80
â
8
â
ïA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 12 A, VGE = 15 V Note3
V
IC = 25 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 12 A
ns VCC = 300 V, VGE = 15 V
ns IC = 12 A
ns Rg = 5 ïï
ns Inductive load
ïs Tc = 100 ï°C
VCC ï£ 360 V, VGE = 15 V
1.2
1.6
100
â
V
IF = 12 A Note3
ns IF = 12 A
diF/dt = 100 A/ïs
R07DS0531EJ0100 Rev.1.00
Aug 30, 2011
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