RJH60M1DPE Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 600 V - 8 A - IGBT Application: Inverter

RJH60M1DPE
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
I_CES / I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
5
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reverse transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
Short circuit withstand time
t_sc
6
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
V_F
—
t_rr
—
Preliminary
Typ
—
—
—
1.9
2.3
275
25
7.5
12.0
2.0
6.0
30
13
80
80
8
1.4
100
Max
5
±1
7
2.4
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
(Ta = 25°C)
Unit
Test Conditions
A V_CE = 600 V, V_GE = 0
A V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 8 A, V_GE = 15 V ^Note3
V
I_C = 16 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF
V_GE = 0
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 8 A}
ns V_CC = 300V, V_GE = 15 V
ns ^IC ^{= 8 A,}
ns ^{Rg = 5 ï€} 
ns ^{Inductive load}
s Tc = 100 C
V_CC  360V, V_GE = 15 V
V
I_F = 8 A ^Note3
ns I_F = 8 A
di_F/dt = 100 A/s
R07DS0529EJ0100 Rev.1.00
Sep 02, 2011
Page 2 of 3