RJH60F6DPQ-A0 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F6DPQ-A0
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
I_CES
⎯
Gate to emitter leak current
I_GES
⎯
Gate to emitter cutoff voltage
V_GE(off)
4
Collector to emitter saturation voltage V_CE(sat)
⎯
Input capacitance
Cies
⎯
Output capacitance
Coes
⎯
Reverse transfer capacitance
Cres
⎯
Switching time
t_d(on)
⎯
t_f
⎯
t_d(off)
⎯
t_f
⎯
C-E diode forward voltage
V_ECF1
⎯
V_ECF2
⎯
C-E diode reverse recovery time
t_rr
⎯
Notes: 3. Pulse test
Typ
⎯
⎯
⎯
1.35
3800
150
65
58
80
131
74
1.2
1.5
90
Max
100
±1
8
1.75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
⎯
⎯
Unit
μA
μA
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
V_CE = 600V, V_GE = 0
V_GE = ±30 V, V_CE = 0
V_CE = 10V, I_C = 1 mA
I_C = 45 A, V_GE = 15V ^Note3
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
I_C = 30 A,
V_CE = 400 V, V_GE = 15 V
Rg = 5 Ω ^Note3,
Inductive load
I_F = 20 A ^Note3
I_F = 40 A ^Note3
I_F = 20 A
di_F/dt = 100 A/μs
R07DS0327EJ0100 Rev.1.00
Apr 06, 2011
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