RJH60C9DPD Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60C9DPD
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ diode reverse current
I_CES / I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
4.0
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Cies
—
Coes
—
Cres
—
Qg
—
Qge
—
Qgc
—
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
(Ta = 25°C)
Typ Max Unit
Test Conditions
—
1.0
μA V_CE = 600 V, V_GE = 0V
—
±100
6.0
8.0
1.9
2.5
2.0
180
—
19
—
7
—
8.0
—
5.0
—
2.5
—
25
—
50
—
40
—
250
—
nA V_GE = ±30 V, V_CE = 0V
V
V_CE = 10 V, I_C = 1 mA
V Tc = 25°C
I_C = 5 A, V_GE = 15 V ^Note3
V Tc = 100°C
I_C = 5 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF ^VGE ^{= 0V}
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 5 A}
ns I_C = 5 A
ns ^RL ^{= 37.5 Ω}
ns
V_GE = 15 V
ns ^{Rg = 5 Ω}
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
4. Under development.
V_F
—
1.8
2.3
V
I_F = 5 A ^Note3
t_rr
—
100
—
ns I_F = 5 A, di_F/dt = 100 A/μs
—The specifications potentially be changed without notice.
REJ03G1838-0100 Rev.1.00 Oct 14, 2009
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