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RJH60A83RDPD-A0 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – 600V - 10A - IGBT Application: Inverter | |||
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RJH60A83RDPD-A0
Electrical Characteristics
Item
Symbol Min
Collector to emitter breakdown
voltage
V(BR)CES
600
Zero gate voltage collector current
/ diode reverse current
ICES / IR
â
Gate to emitter leak current
IGES
â
Gate to emitter cutoff voltage
VGE(off)
4.5
Collector to emitter saturation voltage VCE(sat)
â
VCE(sat)
â
Input capacitance
Cies
â
Output capacitance
Coes
â
Reveres transfer capacitance
Cres
â
Total gate charge
Qg
â
Gate to emitter charge
Qge
â
Gate to collector charge
Qgc
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Turn-on energy
Eon
â
Turn-off energy
Eoff
â
Total switching energy
Etotal
â
Short circuit withstand time
tsc
3.0
FRD Forward voltage
VF
â
FRD reverse recovery time
trr
â
FRD reverse recovery charge
Qrr
â
FRD peak reverse recovery current
Irr
â
Notes: 3. Pulse test.
Preliminary
Typ
â
â
â
â
2.1
3.1
280
19
11
19.7
3.4
12.0
31
14
54
45
0.23
0.16
0.39
5.0
2.3
130
0.28
5.9
Max
â
1
±100
7.5
2.6
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
(Ta = 25°C)
Unit
Test Conditions
V
IC =10 μA, VGE = 0
μA VCE = 600 V, VGE = 0 V
nA VGE = ±30 V, VCE = 0 V
V
VCE = 10 V, IC = 1 mA
V
IC = 10 A, VGE = 15 V Note3
V
IC = 20 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0 V
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 10 A
ns VCC = 300V
ns VGE = 15 V
ns IC = 10 A,
ns Rg = 5 Ω
mJ Inductive load
mJ
mJ
μs VCE ⤠360 V, VGE = 15 V
Tj=100°C
V
IF = 10 A Note3
ns IF = 10 A
μC diF/dt = 100 A/μs
A
R07DS1093EJ0100 Rev.1.00
Jul 04, 2013
Page 2 of 8
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