RJH1CV6DPK_15 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 1200V - 30A - IGBT Application: Inverter

RJH1CV6DPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
I_CES/I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
4.5
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reverse transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Turn-on energy
E_on
—
Turn-off energy
E_off
—
Total switching energy
E_total
—
Short circuit withstand time
t_sc
—
FRD forward voltage
V_F
—
FRD reverse recovery time
t_rr
—
FRD reverse recovery charge
Q_rr
—
FRD peak reverse recovery current
I_rr
—
Notes: 3. Pulse test.
Preliminary
Typ
—
—
—
1.8
2.6
1600
85
43
105
14
55
46
33
125
120
2.3
1.7
4.0
5
2.0
180
0.63
9.2
Max
5
±1
6.5
2.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test Conditions
A V_CE = 1200 V, V_GE = 0
A V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 30 A, V_GE = 15 V ^Note3
V
I_C = 60 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF ^VGE ^{= 0}
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 35 A}
ns V_CC = 600 V
ns ^VGE ^{= 15 V}
ns ^{IC = 30 A}
ns ^{Rg = 5 ï€} 
mJ ^{Inductive load}
mJ
mJ
s V_CC  720 V, V_GE = 15 V
Tc  125°C
V
I_F = 30 A ^Note3
ns I_F = 30 A
C ^diF^{/dt = 100 A/s}
A
R07DS0747EJ0300 Rev.3.00
Feb 14, 2013
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