RJH1CV5DPQ-E0 Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 1200V - 25A - IGBT Application: Inverter

RJH1CV5DPQ-E0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
I_CES /I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
4
Collector to emitter saturation voltage V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Switching time
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
Short circuit withstand time
t_sc
—
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
V_F
—
t_rr
—
Preliminary
Typ
—
—
—
1.8
1100
40
25
40
15
90
200
5
1.7
200
Max
5
±1
8
—
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test Conditions
A V_CE = 1200 V, V_GE = 0
A V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 25 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF ^VGE ^{= 0}
pF ^{f = 1 MHz}
ns V_CC = 600 V, V_GE = 15 V
ns ^IC ^{= 25 A}
ns ^{Rg = 5 ï€} 
ns ^{Inductive load}
s V_CC  720 V, V_GE = 15 V
Tc  125°C
V
I_F = 25 A ^Note3
ns I_F = 25 A
di_F/dt = 100 A/s
R07DS0523EJ0400 Rev.4.00
Jan 19, 2012
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