RJF0614JSP Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 60V, 1.5A N Channel Thermal FET Power Switching

RJF0614JSP
Target Specifications
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Return temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 5. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Thr
Vop
ID limit
Min
3.5
—
—
—
—
—
—
—
—
3.5
1.5
Typ
Max
—
—
—
1.2
—
100
—
50
—
1
0.8
—
0.35
—
175
—
120
—
—
12
—
—
Unit
V
V
A
A
A
mA
mA
C
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
Channel temperature
VGS = 5 V, VDS = 10 V ^{Note 5}
Electrical Characteristics
Item
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
ID1
ID2
ID3
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
Min
—
—
1.5
60
16
–2.5
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
Max
5.5
10
—
—
—
—
100
50
1
–100
—
—
10
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
Gate to source cutoff voltage
VGS(off)
1.1
—
2.1
V
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
238
297
m
201
250
m
Output capacitance
Coss
—
130
—
pF
Turn-on delay time
td(on)
—
1.4
—
s
Rise time
tr
—
3.1
—
s
Turn-off delay time
td(off)
—
3.6
—
s
Fall time
tf
—
1.9
—
s
Body-drain diode forward voltage
V_DF
—
0.8
—
V
Body-drain diode reverse recovery
trr
time
—
910
—
ns
Over load shut down
operation time ^{Note 7}
tos1
—
0.94
—
ms
tos2
—
0.53
—
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 10 V ^{Note 6}
VGS = 1.2 V, VDS =10 V
VGS = 5 V, VDS = 10 V ^{Note 6}
ID = 10 mA, VGS = 0
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0,
Ta = 125C
ID = 1 mA, VDS = 10 V
ID = 0.75 A, VGS = 5 V ^{Note 6}
ID = 0.75 A, VGS = 10 V ^{Note 6}
VDS = 10 V, VGS = 0, f = 1MHz
ID= 0.75 A, VGS = 5 V,
RL = 40 
IF = 1.5 A, VGS = 0
IF = 1.5 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
R07DS1251EJ0100 Rev.1.00
Jun 16, 2015
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