RJF0610DSP_16 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 60V , 1.5A Silicon N channel Thermal FET

RJF0610DSP
Target Specifications
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Return temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 5. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
IIH(sd)3
Tsd
Thr
Vop
ID limit
Min
3.5
—
—
—
—
—
—
—
—
—
3.5
1.5
Typ
—
—
—
—
—
0.4
0.24
0.16
175
120
—
—
Max
—
1.2
100
50
1
—
—
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
mA
C
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 5 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 5 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
Channel temperature
VGS = 5 V, VDS = 10 V ^{Note 5}
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Drain current
ID1
—
—
2.4
A
ID2
—
—
10
mA
ID3
1.5
—
—
A
Drain to source breakdown voltage V(BR)DSS
60
—
—
V
Gate to source breakdown voltage V(BR)GSS
16
—
—
V
V(BR)GSS
–2.5
—
—
V
Gate to source leak current
IGSS1
—
—
100
A
IGSS2
—
—
50
A
IGSS3
—
—
1
A
IGSS4
—
—
–100
A
Input current (shut down)
IGS(OP)1
—
0.4
—
mA
IGS(OP)2
—
0.24
—
mA
IGS(OP)3
—
0.16
—
mA
Zero gate voltage drain current
IDSS
—
—
10
A
Gate to source cutoff voltage
VGS(off)
1.4
—
2.5
V
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
207
285
m
153
214
m
Output capacitance
Coss
—
267
—
pF
Turn-on delay time
td(on)
—
4.3
—
s
Rise time
tr
—
18.3
—
s
Turn-off delay time
td(off)
—
0.62
—
s
Fall time
tf
—
0.61
—
s
Body-drain diode forward voltage
V_DF
—
0.8
—
V
Body-drain diode reverse recovery
trr
time
—
55
—
ns
Over load shut down
operation time ^{Note 7}
tos1
—
18
—
ms
tos2
—
5.7
—
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
VGS = 5 V, VDS = 10 V ^{Note 6}
ID = 10 mA, VGS = 0
IG = 500 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 5 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 5 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.7 A, VGS = 5 V ^{Note 6}
ID = 0.7 A, VGS = 10 V ^{Note 6}
VDS = 10 V, VGS = 0, f = 1MHz
ID= 0.7 A, VGS = 5 V, RL = 43 
IF = 1.5 A, VGS = 0
IF = 1.5 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
R07DS0560EJ0301 Rev.3.01
Sep 06, 2016
Page 2 of 7