RJF0609JSP_16 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 60V - 1.5V Silicon N Channel Thermal FET Power Switching

RJF0609JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 5. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
—
—
—
—
—
—
—
3.5
1.5
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V ^{Note 5}
Electrical Characteristics
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
ID1
ID2
ID3
V(BR)DSS
Min
—
—
1.5
60
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
16
–2.5
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
Max
Unit
5.4
A
10
mA
—
A
—
V
—
V
—
V
100
A
50
A
1
A
–100
A
—
mA
—
mA
10
A
Gate to source cutoff voltage
VGS(off)
1.1
—
2.1
V
Forward transfer admittance
|yfs|
1.0
2.2
—
S
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
208
350
m
142
263
m
Output capacitance
Coss
—
265
—
pF
Turn-on delay time
td(on)
—
0.55
—
s
Rise time
tr
—
1.88
—
s
Turn-off delay time
td(off)
—
3.9
—
s
Fall time
tf
—
3.7
—
s
Body-drain diode forward voltage
V_DF
—
0.82
—
V
Body-drain diode reverse
recovery time
trr
—
71
—
ns
Over load shut down
operation time ^{Note 7}
tos1
—
1.02
—
ms
tos2
—
0.59
—
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 10 V ^{Note 6}
VGS = 1.2 V, VDS = 10 V
VGS = 12 V, VDS = 10 V ^{Note 6}
ID = 10 mA, VGS = 0
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS =– 2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0
Ta = 125C
ID = 1 mA, VDS = –0 V
ID = 0.75 A, VDS = 10 V ^{Note 6}
ID = 0.75 A, VGS = 4 V ^{Note 6}
ID = 0.75 A, VGS = 10 V ^{Note 6}
VDS = 10 V, VGS = 0, f = 1MHz
ID= 0.7 A, VGS = 10 V
RL = 43 
IF = 1.5 A, VGS = 0
IF = 1.5 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
R07DS1066EJ0200 Rev.2.00
Jan 15, 2016
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