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| NP90N06VDK Datasheet, PDF (2/9 Pages) Renesas Technology Corp – N-channel Power MOS FET | |||
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NP90N06VDK
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current â2
IAR
Repetitive Avalanche Energy â2
EAR
Notes: *1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
*2. RG = 25 Ω, VGS = 20 V â 0 V
Ratings
60
±20
±90
±360
147
1.2
175
â55 to +175
33
108
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.02
125
°C/W
°C/W
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
Page 2 of 7
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