NE3520S03-A Datasheet, PDF (2/10 Pages) Renesas Technology Corp – N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

NE3520S03
RECOMMENDED OPERATING RANGE (T_A = +25°C, unless otherwise specified)
Parameter
Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage
Drain Current
Input Power
V_DS
+1
+2
+3
V
I_D
5
10
15
mA
P_in
–
–
0
dBm
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
Test Conditions
I_GSO
I_DSS
V_{GS (off)}
gm
NF
G_a
V_GS = –3.0 V
V_DS = 2 V, V_GS = 0 V
V_DS = 2 V, I_D = 100 μA
V_DS = 2 V, I_D = 10 mA
V_DS = 2 V, I_D = 10 mA, f = 20 GHz
MIN. TYP. MAX. Unit
–
0.5
10
μA
25
40
70
mA
–0.2 –0.7 –1.3
V
50
65
–
mS
–
0.65 0.90
dB
11.5 13.5
–
dB
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
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