N0801R Datasheet, PDF (2/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR

N0801R
TYPICAL CHARACTERISTICS (T_a = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
−0.04
20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−0.03
−0.02
−0.01
0
0
1000
−100
−90
−80
−70
−60
−50
−40
−30
−20
IB = −10 A
−2
−4
−6
−8
−10
VCE - Collector to Emitter Voltage - (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
125˚C
25˚C
25˚C
100
VCE = −2 V
Pulsed
SAFE OPERATING AREA
−10
Ta = 25˚C
Single pulse
1 ms
−1
10 ms
100 ms
−0.1
−0.01
−1
−10
−100
VCE - Collector to Emitter Voltage - (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−1
−20
−16
−12
−0.8
−10
−8
−6
−0.6
−4
−0.4
IB = −2 mA
−0.2
0
0
−0.4 −0.8 −1.2 −1.6
−2
VCE - Collector to Emitter Voltage - (V)
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−10
IC = 10IB
Pulsed
−1
VBE(sat)
−0.1
VCE(sat)
10
−0.0001 −0.001 −0.01 −0.1
−1
−10
IC - Collector Current - (A)
R07DS0728EJ0100 Rev.1.00
Mar 30, 2012
−0.01
−0.001
−0.01
−0.1
−1
−10
IC - Collector Current - (A)
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