N0500S Datasheet, PDF (2/5 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR

N0500S
TYPICAL CHARACTERISTICS (T_a = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
90
0.02
80
70
60
0.01
50
40
30
20
IB = 10 A
0
0
1000
2
4
6
8
10
VCE - Collector to Emitter Voltage - (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
125˚C
25˚C
25˚C
100
VCE = 1 V
Pulsed
SAFE OPERATING AREA
10
Ta = 25˚C
Single pulse
1 ms
1
10 ms
100 ms
0.1
0.01
1
10
100
VCE - Collector to Emitter Voltage - (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.8
5.0
4.5
4.0
0.6
3.5
3.0
2.5
2.0
0.4
1.5
1.0
0.2
IB = 0.5 mA
0
0
0.4
0.8
1.2
1.6
2
VCE - Collector to Emitter Voltage - (V)
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1
VBE(sat)
0.1
0.01
VCE(sat)
10
0.001
0.01
0.1
1
IC - Collector Current - (A)
R07DS0723EJ0100 Rev.1.00
Mar 30, 2012
0.001
0.001
IC = 10IB
0.01
0.1
1
IC - Collector Current - (A)
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