HZU6.8Z Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZU6.8Z
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Item
Symbol Min
Typ
Zener voltage
V_Z
6.47
—
Reverse current
I_R
—
—
Capacitance
C
—
—
Dynamic resistance r_d
—
—
ESD-Capability *
—
20
—
Note: Failure criterion ; I_R > 2 µA at V_R = 3.5 V.
(Ta = 25°C)
Max
Unit
Test Condition
7.0
V
I_Z = 5 mA, 40 ms pulse
2
µA V_R = 3.5 V
25
pF V_R = 0 V, f = 1 MHz
30
Ω
I_Z = 5 mA
—
kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Rev.2.00 Jun 16, 2005 page 2 of 5