HZU6.2Z Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZU6.2Z
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Zener voltage
V_Z
Reverse current
I_R
Capacitance
C
Dynamic resistance r_d
5.90
—
6.50
V
I_Z = 5 mA, 40 ms pulse
—
—
3
µA V_R = 5.5 V
—
8.0
8.5
pF V_R = 0 V, f = 1 MHz
—
—
60
Ω
I_Z = 5 mA
Rev.2.00 Jun 16, 2005 page 2 of 5