HZU-G Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorption

HZU-G Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig2.
Symbol
Pd *
Tj
Tstg
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Reverse Current
Dynamic Resistance
Type No.
V_Z (V) *¹
Min
Max
Test
Condition
I_Z (mA)
I_R (µA)
Max
Test
Condition
V_R (V)
r_d (Ω)
Max
Test
Condition
I_Z (mA)
HZU5.1G
4.84
5.37
5
5
1.5
130
5
HZU5.6G 5.31
5.92
5
5
2.5
80
5
HZU6.2G 5.86
6.53
5
2
3.0
50
5
HZU6.8G 6.47
7.14
5
2
3.5
30
5
HZU7.5G 7.06
7.84
5
2
4.0
30
5
HZU8.2G 7.76
8.64
5
2
5.0
30
5
HZU9.1G 8.56
9.55
5
2
6.0
30
5
HZU10G 9.45
10.55
5
2
7.0
30
5
HZU12G 11.42
12.60
5
2
9.0
35
5
HZU13G 12.47
13.96
5
2
10.0
35
5
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec
(Ta = 25°C)
ESD-Capability *²
— (kV) *²
Min
30
30
30
30
30
30
30
30
30
30
Mark Code
Type No.
HZU5.1G
HZU5.6G
HZU6.2G
HZU6.8G
HZU7.5G
HZU8.2G
HZU9.1G
HZU10G
HZU12G
HZU13G
Mark No.
51
56
62
68
75
82
91
10
12
13
Rev.3.00 Jun 08, 2006 page 2 of 4