HZS Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

HZS Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
−55 to +175
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
Grade
VZ (V)*¹
Min
Max
HZS2 A1
1.6
1.8
A2
1.7
1.9
A3
1.8
2.0
B1
1.9
2.1
B2
2.0
2.2
B3
2.1
2.3
C1
2.2
2.4
C2
2.3
2.5
C3
2.4
2.6
HZS3 A1
2.5
2.7
A2
2.6
2.8
A3
2.7
2.9
B1
2.8
3.0
B2
2.9
3.1
B3
3.0
3.2
C1
3.1
3.3
C2
3.2
3.4
C3
3.3
3.5
HZS4 A1
3.4
3.6
A2
3.5
3.7
A3
3.6
3.8
B1
3.7
3.9
B2
3.8
4.0
B3
3.9
4.1
C1
4.0
4.2
C2
4.1
4.3
C3
4.2
4.4
HZS5 A1
4.3
4.5
A2
4.4
4.6
A3
4.5
4.7
B1
4.6
4.8
B2
4.7
4.9
B3
4.8
5.0
Note: 1. Tested with DC.
Test
Condition
IZ (mA)
5
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
25
0.5
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
100
5
5
5
0.5
100
5
5
5
0.5
100
5
5
5
1.0
100
5
5
5
1.5
100
5
Rev.3.00, Mar.11.2004, page 2 of 6