HZS-L Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Low Noise Application

HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
Unit
400
mW
200
°C
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
VZ (V)*¹
Type
Grade Min
Max
HZS6L A1
5.2
5.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
C2
6.0
6.3
C3
6.1
6.4
HZS7L A1
6.3
6.6
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
Note: 1. Tested with DC.
Test
Condition
IZ (mA)
0.5
Reverse Current
Test
IR (µA) Condition
Max
VR (V)
1
2.0
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
150
0.5
80
0.5
60
0.5
0.5
1
3.5
60
0.5
Rev.2.00, Jan.06.2003, page 2 of 6