HZN6.8ZMFA Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZN6.8ZMFA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd *¹
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note: 1. Four device total, See Fig.2.
Electrical Characteristics *¹
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Zener voltage
V_Z
Reverse current
I_R
Capacitance
C
Dynamic resistance r_d
ESD-Capability *² *³ —
6.47 —
—
—
—
—
—
—
25
—
7.00 V
0.5 µA
25
pF
30
Ω
—
kV
I_Z = 5 mA, 40 ms pulse
V_R = 3.5 V
V_R = 0 V, f = 1 MHz
I_Z = 5 mA
C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Notes: 1. Per one device.
2. Failure criterion ; I_R > 0.5 µA at V_R = 3.5 V.
3. Between cathode and anode.
Month Code
Month of Manufacture
January
February
March
April
May
June
Month Code
A
B
C
D
E
F
Month of Manufacture
July
August
September
October
November
December
Month Code
G
H
J
K
L
M
Rev.1.00, May.08.2003, page 2 of 6