HZM6.8ZMFA Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZM6.8ZMFA
Absolute Maximum Ratings
Item
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: Four device total, See Fig.2.
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
Item
Symbol Min
Typ
Zener voltage
V_Z
6.47
—
Reverse current
I_R
—
—
Capacitance
C
—
—
Dynamic resistance r_d
ESD-Capability *²
—
—
—
25
—
Notes: 1. Per one device
2. Failure criterion ; I_R > 2 µA at V_R = 3.5 V.
Max
7.00
2
25
30
—
(Ta = 25°C)
Unit
Test Condition
V
I_Z = 5 mA, 40 ms pulse
µA V_R = 3.5 V
pF V_R =0 V, f = 1 MHz
Ω
I_Z = 5 mA
kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse.
Rev.3.00 Jun 14, 2005 page 2 of 5