HZM6.8Z4MWA Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZM6.8Z4MWA
Absolute Maximum Ratings
Item
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: two device total, See Fig.2.
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
Item
Symbol Min
Typ
Zener voltage
VZ
6.47
—
Reverse current
IR
—
—
Capacitance
C
—
4.0
Dynamic resistance rd
ESD-Capability *²
—
—
—
8
—
Notes: 1. Per one device.
2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
(Ta = 25°C)
Max Unit
Test Condition
7.00
V IZ = 5 mA, 40 ms pulse
2
µA VR = 3.5 V
4.5
pF VR = 0 V, f = 1 MHz
30
Ω IZ = 5 mA
—
kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Rev.1.00, Oct 01, 2004, page 2 of 4