HZM6.8Z4MFA Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZM6.8Z4MFA
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: Four device total, See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
Item
Symbol Min
Typ
Max
Zener voltage
VZ
Reverse current
IR
6.47
—
7.00
—
—
2
Capacitance
C
—
4.0
4.5
Dynamic resistance rd
ESD-Capability *²
—
—
—
30
8
—
—
Notes: 1. Per one device.
2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
(Ta = 25°C)
Unit Test Condition
V
IZ = 5 mA, 40 ms pulse
µA
VR = 3.5 V
pF
VR = 0 V, f = 1 MHz
Ω
IZ = 5 mA
kV
C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Rev.1.00, Mar.29.2004, page 2 of 4