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HZM6.2ZMFA Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb | |||
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HZM6.2ZMFA
Absolute Maximum Ratings
Item
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: Four device total, See Fig.2.
Symbol
Value
200
150
â55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *1
Item
Symbol Min
Typ
Zener voltage
VZ
5.90
â
Reverse current
IR
â
â
Capacitance
C
â
â
Dynamic resistance rd
ESD-Capability *2
â
â
â
13
â
Notes: 1. Per one device
2. Failure criterion ; IR > 3 µA at VR = 5.5 V.
Max
6.50
3
8.5
60
â
(Ta = 25°C)
Unit
Test Condition
V
IZ = 5 mA, 40 ms pulse
µA VR = 5.5 V
pF VR =0 V, f = 1 MHz
â¦
IZ = 5 mA
kV C = 150 pF, R = 330 ⦠, Both forward
and reverse direction 10 pulse.
Rev.1.00 Jun 08, 2005 page 2 of 5
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