HZM6.2Z4MWA Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZM6.2Z4MWA
Absolute Maximum Ratings
Item
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: Two device total, See Fig.2.
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
P
P
Item
Symbol Min
Typ
Zener voltage
V ZB
B
5.90
—
Reverse current
I RB
B
—
—
Capacitance
C
—
4.0
Dynamic resistance
r dB
B
ESD-Capability
*²
P
P
—
—
—
8
—
Notes: 1. Per one device.
2.
Failure
criterion
;
I RB
B
>
3
µA
at
V RB
B
=
5.5
V.
Max
6.50
3
4.5
60
—
Unit
V
µA
pF
Ω
kV
(Ta = 25°C)
Test Condition
I ZB
B
=
5
mA,
40
ms
pulse
V RB
B
=
5.5
V
V RB
B
=
0
V,
f
=
1
MHz
I ZB
B
=
5
mA
C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Rev.1.00, Oct 01, 2004, page 2 of 4