HZM5.6ZFA Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZM5.6ZFA
Absolute Maximum Ratings
Item
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: Four device total, See Fig.2.
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
Item
Symbol Min
Typ
Zener voltage
V_Z
5.31
—
Reverse current
I_R
—
—
Capacitance
C
—
8.0
Dynamic resistance r_d
ESD-Capability *²
—
—
—
8
—
Notes: 1. Per one device
2. Failure criterion ; I_R > 0.5 µA at V_R = 2.5 V.
Max
5.92
0.5
8.5
80
—
(Ta = 25°C)
Unit
Test Condition
V
I_Z = 5 mA, 40 ms pulse
µA V_R = 2.5 V
pF V_R =0 V, f = 1 MHz
Ω
I_Z = 5 mA
kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse.
Rev.3.00 Jun 03, 2005 page 2 of 5