HZM5.6MWA Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZM5.6MWA
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: Two device total, See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
Item
Symbol Min
Typ
Zener voltage
VZ
5.31
—
Reverse current
IR
—
—
Capacitance
C
—
110
Dynamic resistance rd
ESD-Capability *² *³ —
—
—
30
—
Notes: 1. Per one device.
2. Failure criterion ; IR > 5 µA at VR = 2.5 V.
3. Between cathode anode.
Max
5.92
5
—
80
—
(Ta = 25°C)
Unit Test Condition
V
IZ = 5 mA, 40 ms pulse
µA
VR = 2.5 V
pF
VR = 0 V, f = 1 MHz
Ω
IZ = 5 mA
kV
C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Rev.1.00, Apr.05.2004, page 2 of 4