HZM27FA Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZM27FA
Absolute Maximum Ratings
Item
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: Four device total, See Fig.2.
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics *¹
Item
Zener voltage
Reverse current
Capacitance
Dynamic resistance
ESD-Capability *³
Symbol
V_Z
I_R
C
r_d
—
Min
25.10
—
—
—
30
Typ
—
—
(27) *²
—
—
Notes: 1. Per one device
2. Reference only
3. Failure criterion ; I_R > 2 µA at V_R = 21 V
Max
28.90
2
—
70
—
(Ta = 25°C)
Unit
Test Condition
V
I_Z = 2 mA, 40 ms pulse
µA V_R = 21 V
pF V_R = 0 V, f = 1 MHz
Ω
I_Z = 2 mA
kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse.
Rev.4.00 Jun 14, 2005 page 2 of 4