HZM-N_11 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Stabilizer

HZM-N Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: 1. See Fig. 3.
Pd *¹
Tj
Tstg
Symbol
Value
200
150
–55 to +150
Preliminary
(Ta = 25C)
Unit
mW
C
C
Electrical Characteristics
Zener Voltage
Type
Grade
V_Z (V)*¹
Min
Max
Test
Condition
I_Z (mA)
HZM2.0N
B
1.90
2.20
5
HZM2.2N
B
2.10
2.40
5
HZM2.4N
B
2.30
2.60
5
HZM2.7N
B1
2.50
2.75
5
B2
2.65
2.90
HZM3.0N
B1
2.80
3.05
5
B2
2.95
3.20
HZM3.3N
B1
3.10
3.35
5
B2
3.25
3.50
HZM3.6N
B1
3.40
3.65
5
B2
3.55
3.80
HZM3.9N
B1
3.70
3.97
5
B2
3.87
4.10
HZM4.3N
B1
4.01
4.21
5
B2
4.15
4.34
B3
4.28
4.48
HZM4.7N
B1
4.42
4.61
5
B2
4.55
4.75
B3
4.69
4.90
HZM5.1N
B1
4.84
5.04
5
B2
4.98
5.20
B3
5.14
5.37
HZM5.6N
B1
5.31
5.55
5
B2
5.49
5.73
B3
5.67
5.92
HZM6.2N
B1
5.86
6.12
5
B2
6.06
6.33
B3
6.26
6.53
HZM6.8N
B1
6.47
6.73
5
B2
6.65
6.93
B3
6.86
7.14
HZM7.5N
B1
7.06
7.36
5
B2
7.28
7.60
B3
7.52
7.84
Note: 1. Tested with pulse (Pw = 40 ms)
Reverse Current
I_R (A)
Test
Condition
Max
V_R (V)
120
0.5
120
0.7
120
1.0
120
1.0
50
1.0
20
1.0
10
1.0
10
1.0
10
1.0
10
1.0
5
1.5
5
2.5
2
3.0
2
3.5
2
4.0
(Ta = 25C)
Dynamic Resistance
r_d ()
Max
100
Test
Condition
I_Z (mA)
5
100
5
100
5
110
5
120
5
130
5
130
5
130
5
130
5
130
5
130
5
80
5
50
5
30
5
30
5
R07DS0358EJ0600 Rev.6.00
May 19, 2011
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