HZL6.2Z4 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZL6.2Z4
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
100
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
Reverse current
IR
Capacitance
C
Dynamic resistance rd
ESD-Capability *¹ —
5.90
—
6.50
V
IZ = 5 mA, 40 ms pulse
—
—
3
µA VR = 5.5 V
—
—
4.0
pF VR = 0 V, f = 1 MHz
—
—
60
Ω
IZ = 5 mA
8
—
—
kV C = 150 pF, R = 330 Ω, Both Forward
and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V.
2. Please do not use the soldering iron due to avoid high stress to the EFP package.
3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is
considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00, Oct 01, 2004, page 2 of 4