HZD6.8Z4 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Surge Absorb

HZD6.8Z4
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
150
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
Reverse current
IR
Capacitance
C
Dynamic resistance rd
ESD-Capability *¹*² —
6.47
—
7.00
V
IZ = 5 mA, 40 ms pulse
—
—
2
µA VR = 3.5 V
—
—
4
pF VR = 1 V, f = 1 MHz
—
—
30
Ω
IZ = 5 mA
8
—
—
kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 2 µA at VR = 3.5 V.
2. Between cathode and anode.
3. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.2.00, Oct 20, 2004, page 2 of 4