HZ12C3L Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Low Noise Application

HZ-L Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
175
−55 to +175
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
Grade
VZ (V)*¹
Min
Max
HZ6L
A1
5.2
5.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
C2
6.0
6.3
C3
6.1
6.4
HZ7L
A1
6.3
6.6
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
HZ9L
A1
7.7
8.1
A2
7.9
8.3
A3
8.1
8.5
B1
8.3
8.7
B2
8.5
8.9
B3
8.7
9.1
C1
8.9
9.3
C2
9.1
9.5
C3
9.3
9.7
HZ11L A1
9.5
9.9
A2
9.7
10.1
A3
9.9
10.3
B1
10.2
10.6
B2
10.4
10.8
B3
10.7
11.1
Note: 1. Tested with DC.
Test
Condition
IZ (mA)
0.5
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
1
2.0
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
150
0.5
80
0.5
60
0.5
0.5
1
3.5
60
0.5
0.5
1
6.0
60
0.5
0.5
1
8.0
80
0.5
Rev.2.00, Mar.11.2004, page 2 of 5>