HVU362 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Variable Capacitance Diode VCXO

HVU362
Absolute Maximum Ratings
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
VR
Tj
Tstg
Value
15
125
−55 to +125
(Ta = 25°C)
Unit
V
°C
°C
Electrical Characteristics
Item
Reverse current
Capacitance
Capacitance ratio
Series resistance
ESD-Capability *¹
Symbol Min Typ Max
IR1
—
—
10
IR2
—
—
100
C1
41.6 —
49.9
C4
10.1 —
14.8
n
3.0
—
—
rs
—
—
2.0
—
80
—
—
Note: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V
Unit
nA
pF
—
Ω
V
(Ta = 25°C)
Test Condition
VR = 10 V
VR = 10 V, Ta =60°C
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
C1 / C4
VR = 4 V, f = 100 MHz
C = 200 pF, Both forward and reverse direction
1 pulse.
Rev.1.00, Apr 16, 2004, page 2 of 4