HVU187 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

HVU187
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V_R
I_F
Pd
Tj
Tstg
Value
Unit
60
V
50
mA
100
mW
125
°C
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max
Reverse current
I
R
Forward voltage
V_F
Capacitance
C
— — 100
— — 1.0
— — 2.4
Forward resistance r
f
ESD-Capability *¹ —
3.5 — 5.5
200 — —
Note: 1. Failure criterion; I_R ≥ 100 nA at V_R = 60 V
Unit
nA
V
pF
Ω
V
Test Condition
V = 60 V
R
I_F = 10 mA
V = 0 V, f = 1 MHz
R
I = 10 mA, f = 100 MHz
F
C = 200 pF, Both forward and reverse
direction 1 pulse.
Rev.5.00, Oct.08.2003, page 2 of 4