HVU17 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Variable Capacitance Diode for VCO

HVU17
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
V_R
Tj
Tstg
Value
15
125
−55 to +125
Unit
V
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Figure of merit
ESD-Capability *¹
Symbol Min Typ Max
V_R
15.0 — —
I_R
— — 100
C₁
50.0 — 85.0
C₃
16.1 — 27.3
C_4.5
5.23 — 8.84
n
5.60 — —
Q
50 — —
—
80 — —
Note: 1. Failure criterion ; I_R ≥ 100nA at V_R =9 V
Unit
V
nA
pF
—
—
V
Test Condition
I_R = 10 µA
V_R = 9 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
V_R = 4.5 V, f = 1 MHz
C₁/C_4.5
V_R = 2.5 V, f = 10 MHz
C = 200 pF, Both forward and reverse
direction 1 pulse.
Rev.1.00, Sep.17.2003, page 2 of 4