HVU145 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

HVU145
Absolute Maximum Ratings
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
V_R
I_F
Pd
Tj
Tstg
Symbol
Value
60
50
150
125
−55 to +125
(Ta = 25°C)
Unit
V
mA
mW
°C
°C
Electrical Characteristics
Item
Symbol
Min
Typ
Reverse current
I_R
—
—
Forward voltage
V_F
—
—
Capacitance
C
—
—
Forward resistance
r_f
ESD-Capability *¹
—
—
—
100
—
Note: 1. Failure criterion ; I_R > 100 nA at V_R = 60 V
(Ta = 25°C)
Max
Unit
Test Condition
100
nA V_R = 60 V
0.9
V
I_F = 2 mA
0.45
pF V_R = 1 V, f = 1 MHz
1.8
Ω
I_F = 10 mA, f = 100 MHz
—
V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Rev.2.00 Dec 07, 2004 page 2 of 5