HVR100 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Variable Capacitance Diode for AM tuner

HVR100
Absolute Maximum Ratings
Item
Reverse voltage
Junction temperature
Storage temperature
VR
Tj
Tstg
Symbol
Value
15
125
−55 to +125
(Ta = 25°C)
Unit
V
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
15
—
—
V
IR = 10 µA
Reverse current
IR
—
—
100
nA VR = 9 V
Capacitance
C1
421.5
—
524.6
pF VR = 1 V, f = 1 MHz
C3
182.0
—
275.7
VR = 3 V, f = 1 MHz
C5
73.2
—
121.4
VR = 5 V, f = 1 MHz
C6
42.2
—
72.2
VR = 6 V, f = 1 MHz
C7
26.2
—
41.6
VR = 7 V, f = 1 MHz
C8
20.4
—
28.2
VR = 8 V, f = 1 MHz
Capacitance ratio
n
16
—
—
—
C1 / C8
Figure of merit
Q
200
—
—
— C = 450 pF, f = 1 MHz
Matching error
∆C/C *¹
—
—
3.0
% VR = 1 to 8 V, f = 1 MHz
ESD-Capability *²
—
80
—
—
V
C = 200 pF, Both forward and
reverse direction 1 pulse.
Note:
1. Each group shall uniform a multiple of 3 diodes.
A set of HVR100 is of uniform C-V characteristics.
Measure max. value and min. value of capacitance at each bias point of VR = 1V through 8 V.
Calculate Matching Error,
(Cmax – Cmin)
∆C/C =
Cmin
× 100 (%)
2. Failure criterion ; IR < 100 nA at VR = 9 V
Rev.7.00 Feb 21, 2005 page 2 of 4