HSU276A Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Mixer

HSU276A
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
VRRM
VR
IO
Tj
Tstg
Symbol
Value
5
3
30
125
−55 to +125
(Ta = 25°C)
Unit
V
V
mA
°C
°C
Electrical Characteristics
Item
Reverse voltage
Reverse current
Forward current
Capacitance
ESD-Capability *
Symbol Min
Typ
VR
3.0
—
IR
—
—
IF
35
—
C
—
—
—
30
—
Note: Failure criterion ; IR > 100 µA at VR = 0.5 V
Max
—
50
—
0.85
—
(Ta = 25°C)
Unit
Test Condition
V
IR = 1 mA
µA VR = 0.5 V
mA VF = 0.5V
pF VR = 0.5 V, f = 1 MHz
V C = 200 pF, R = 0 Ω , Both forward and
reverse direction 1 pulse.
Rev.2.00 Apr 28, 2005 page 2 of 4