HSK83 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Voltage Switching

HSK83
Absolute Maximum Ratings
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average rectified current
Junction temperature
Storage temperature
Note: 1. Value at duration of 1s.
Symbol
V_RM
V_R
I_FM
I_FSM *¹
I_O
Tj
Tstg
Value
300
250
625
1
150
175
–65 to +175
(Ta = 25°C)
Unit
V
V
mA
A
mA
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Condition
Forward voltage
V_F
Reverse current
I_R1
I_R2
Capacitance
C
Reverse recovery time t_rr
—
—
1.0
V
I_F = 100 mA
—
—
0.1
µA
V_R = 250 V
—
—
100
V_R = 300 V
—
1.5
—
pF
V_R = 0 V, f = 1 MHz
—
—
100
ns
I_F = I_R = 30 mA, I_rr = 3 mA, R_L = 100 Ω
Rev.4.00, Mar.22.2004, page 2 of 4