HSD88 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Schottky Barrier Diode for Detector, Mixer

HSD88
Absolute Maximum Ratings
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
VR
IO
Tj
Tstg
Symbol
Value
10
15
125
−55 to +125
(Ta = 25°C)
Unit
V
mA
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
0.350
—
0.420
V
IF = 1 mA
VF2
0.500
—
0.580
IF = 10 mA
Reverse current
IR1
—
—
0.2
µA VR = 2 V
IR2
—
—
10
VR = 10 V
Capacitance
C
ESD-Capability *¹
—
—
—
0.80
pF VR = 0 V, f = 1 MHz
30
—
—
Ω C = 200 pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 0.4 µA at VR = 2 V
2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.1.00 Apr 26, 2005 page 2 of 4