HRL0103C Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Schottky Barrier Diode for Rectifying

HRL0103C
Absolute Maximum Ratings
Item
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward surge current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Symbol
VRM *¹
VR
IO *¹
IFM
IFSM *²
Tj
Tstg
Value
30
30
100
300
1
125
−55 to +125
(Ta = 25°C)
Unit
V
V
mA
mA
A
°C
°C
Electrical Characteristics
Item
Symbol Min
Typ
Forward voltage
VF1
VF2
—
—
—
—
Reverse current
IR1
IR2
—
—
—
—
Capacitance
C
—
—
Thermal resistance
Rth(j-a)
—
800
Notes: 1. Polyimide board
20h×15w×0.8t
0.3
(Ta = 25°C)
Max
Unit
Test Condition
0.40
0.60
0.1
0.2
8.0
—
V
V
µA
pF
°C/W
IF = 10 mA
IF = 100 mA
VR = 5 V
VR = 10 V
VR = 0.5 V, f = 1 MHz
Polyimide board *¹
Unit: mm
1.0
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
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