HRD0203C_1 Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Schottky Barrier Diode for Rectifying

HRD0203C
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Symbol
VRRM *¹
IO *¹
IFSM *²
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. See from Fig.3 to Fig.5, with polyimide board.
2. 10 ms sine wave 1 pulse.
Value
30
200
2
125
−55 to +125
(Ta = 25°C)
Unit
V
mA
A
°C
°C
Electrical Characteristics
Item
Symbol Min
Typ
Forward voltage
VF1
—
—
VF2
—
—
Reverse current
IR
—
—
Thermal resistance
Rth(j-a)
—
600
Note: 1. Polyimide board
20h×15w×0.8t
1.5
(Ta = 25°C)
Max
Unit
Test Condition
0.25
0.45
30
—
V
µA
°C/W
IF = 5 mA
IF = 200 mA
VR = 10 V
Polyimide board *¹
Unit: mm
1.5
Rev.1.00 May 20, 2005 page 2 of 5