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HRC0103C Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Schottky Barrier Diode for Rectifying | |||
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HRC0103C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward surge current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Symbol
VRM *1
VR
IO *1
IFM
IFSM *2
Tj
Tstg
Value
Unit
30
V
30
V
100
mA
300
mA
1
A
125
°C
â55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Condition
Forward voltage
Reverse current
Capacitance
Thermal resistance
VF1
â
VF2
â
IR1
â
IR2
â
C
â
Rth(j-a) â
â
0.4
â
0.6
â
0.1
â
0.2
â
8.0
550
â
V
µA
pF
°C/W
IF = 10 mA
IF = 100 mA
VR = 5 V
VR = 10 V
VR = 0.5 V, f = 1 MHz
Polyimide board *1
Note: 1. Polyimide board
20hÃ15wÃ0.8t
1.5
Unit: mm
1.5
Rev.1.00, Aug.29.2003, page 2 of 5
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