HRC0103A Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRC0103A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Repetitive Peak reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Symbol
VRRM *¹
IO *¹
I_FSM *²
Tj
Tstg
Value
Unit
30
V
100
mA
3
A
125
°C
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Forward voltage
VF
—
—
Reverse current
IR
—
—
Thermal resistance Rth(j-a) —
500
Note: 1. Polyimide board
20h×15w×0.8t
1.5
Max
0.44
50
—
Unit
V
µA
°C/W
Test Condition
IF = 100 mA
VR = 30 V
Polyimide board *¹
Unit: mm
1.5
Rev.1.00, Nov.26.2003, page 2 of 5